Samsung Electronics is reportedly set to launch high-capacity and high-heat-dissipation Bonding Vertical (BV) NAND Flash with more than 400 layers in 2026. This move aims to enhance its ...

This new method will increase bit ... V-NAND isn't that big (236 layers versus 280 layers) so the jump to 400 layers is exciting, indeed. Popular Now: Valve paves the way for a Steam Deck 2 ...

We sell different types of products and services to both investment professionals and individual investors. These products and services are usually sold through license agreements or subscriptions ...

IT之家10 月 29 日消息，《韩国经济日报》当地时间昨日表示，根据其掌握的最新三星半导体存储路线图，三星电子将于 2026 年推出的下代 V-NAND 堆叠层数超过 400 ... 此前消息指，三星将于明年完成 4F 2 VCT DRAM 原型开发。 广告声明：文内含有的对外跳转链接 ...

Samsung Electronics has outlined its semiconductor storage roadmap, detailing plans for its next-generation V-NAND and DRAM technologies ... is expected to achieve a bit density around 60% ...

TL;DR: AMD's Ryzen 7 9800X3D features 8 cores and 16 threads with Zen 5 architecture, a 120W TDP, next-gen 3D V-Cache, 96MB of L3 cache, and an unlocked multiplier. It has a 4.7GHz base clock and ...

Samsung Electronics and Kioxia both plan to scale back their NAND flash production in the fourth quarter, according to sources within the industry supply chain. This suggests that the overall ...

The eMMC 5.0 / SD3.0 Host Controller IP (3MCR) is a highly integrated host controller IP solution that supports three key memory and I/O technologies: 1) SD, 2) SDIO and 3) eMMC memory formats. ...

Supports single-level and multi-level cells (SLC and MLC) NAND Flash devices. Compatible with ONFI 2.1 Flash Interface for synchronous and asynchronous access. Supports source synchronous double data ...